(see reverse side) r1 1N3595 silicon low leakage diode jedec do-35 case description the central semiconductor 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. higher breakdown voltage devices are available on special order. maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 150 v peak working reverse voltage v rwm 125 v average forward current i o 150 ma forward steady-state current i f 225 ma recurrent peak forward current i f 600 ma peak forward surge current (1.0s pulse) i fsm 500 ma peak forward surge current (1.0s pulse) i fsm 4.0 a power dissipation p d 500 mw operating and storage junction temperature t j ,t stg -65 to +200 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =125v 1.0 na i r v r =125v, t a =125c 500 na i r v r =125v, t a =150c 3.0 a i r v r =30v, t a =125c 300 na bv r i r =100a 150 v v f i f =1.0ma 0.54 0.69 v v f i f =5.0ma 0.62 0.77 v v f i f =10ma 0.65 0.80 v v f i f =50ma 0.75 0.88 v v f i f =100ma 0.79 0.92 v v f i f =200ma 0.83 1.0 v c t v r =0, f=1.0mhz 8.0 pf t rr v r =3.5v, i f =10ma, r l =1.0k ? 3.0 s
1N3595 low leakage diode r1 jedec do-35 case - mechcanical outline a c b d d r1 marking code: c1N3595 min max min max a 0.018 0.022 0.46 0.56 b 0.120 0.200 3.05 5.08 c 0.060 0.090 1.52 2.29 d 1.000 - 25.40 - do-35 (rev: r0) dimensions symbol inches millimeters
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